Conductivity and gating of silicon ringchains.

نویسندگان

  • Joseph L Speyer
  • Igor V Ovchinnikov
  • Daniel Neuhauser
  • Delroy Baugh
چکیده

One-dimensional and two-dimensional conductivity calculations are done for a set of several closely spaced quantum silicon rings, following the development of bottom-up approaches for producing silicon rings. The transmission is easily influenced by electric and magnetic gatings and has band features even for two or three rings, showing its potential usefulness for logical devices. Analysis on different gatings shows that the electric-field gating would be as effective as the Aharonov-Bohm magnetic gating.

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عنوان ژورنال:
  • The Journal of chemical physics

دوره 123 12  شماره 

صفحات  -

تاریخ انتشار 2005